PNP SILICON PLANAR MEDIUM POWER

ZTX949 HIGH CURRENT TRANSISTOR ZTX949

ISSUE 3 – JUNE 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) FEATURES
* 4.5 Amps continuous current
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Up to 20 Amps peak current
Base-Emitter VBE(on) -860 -1000 mV IC=-5A, VCE=-1V*
* Very low saturation voltage
Turn-On Voltage
* Excellent gain up to 20 Amps
Static Forward hFE 100 200 IC=-10mA, VCE=-1V
* Very low leakage C
Current Transfer Ratio 100 200 300 IC=-1A, VCE=-1V* B
75 140 IC=-5A, VCE=-1V* * Exceptional gain linearity down to 10mA E
35 IC=-20A, VCE=-1V* * Spice model available
E-Line
Transition Frequency fT 100 MHz IC=-100mA, VCE=-10V TO92 Compatible
f=50MHz
ABSOLUTE MAXIMUM RATINGS.
Output Capacitance Cobo 122 pF VCB=-10V, f=1MHz
PARAMETER SYMBOL VALUE UNIT
Switching Times ton 120 ns IC=-4A, IB1=-400mA
toff 130 ns IB2=400mA, VCC=-10V Collector-Base Voltage VCBO -50 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -20 A
THERMAL CHARACTERISTICS
Continuous Collector Current IC -4.5 A
PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp 1.58 W
Thermal Resistance: Junction to Ambient Rth(j-amb) 150 °C/W Power Dissipation at Tamb=25°C Ptot 1.2 W
Junction to Case Rth(j-case) 50 °C/W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -50 -80 V IC=-100µA
Voltage
4.0
Max Power Dissipation - (Watts)

Collector-Emitter Breakdown V(BR)CER -50 -80 V IC=-1µA, RB ≤1KΩ

150 D.C.
Thermal Resistance (°C/W)

t1 D=t1/tP Voltag
3.0
Ca Collector-Emitter Breakdown V(BR)CEO -30 -45 V IC=-10mA*
se 100
te
tP
Voltage
m D=0.6
2.0 pe
ra
tu
Emitter-Base Breakdown V(BR)EBO -6 -8 V IE=-100µA
Amb re 50 Voltage
ient te
1.0 mpe D=0.2
ratu re D=0.1
Collector Cut-Off Current ICBO -50 nA VCB=-40V
D=0.05 -1 µA VCB=-40V, Tamb=100°C
Single Pulse
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER -50 nA VCB=-40V
T -Temperature (°C) Pulse Width (seconds) R ≤1KΩ -1 µA VCB=-40V, Tamb=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) -40 -60 mV IC=-0.5A, IB=-20mA*
Voltage -80 -100 mV IC=-1A, IB=-20mA*
-100 -160 mV IC=-2A, IB=-200mA*
-240 -320 mV IC=-5A, IB=-300mA*
Base-Emitter VBE(sat) -960 -1100 mV IC=-5A, IB=-300mA*
Saturation Voltage

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 PNP SILICON PLANAR MEDIUM POWER
ZTX949 HIGH CURRENT TRANSISTOR ZTX949
ISSUE 3 – JUNE 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) FEATURES
* 4.5 Amps continuous current
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Up to 20 Amps peak current
Base-Emitter VBE(on) -860 -1000 mV IC=-5A, VCE=-1V*
* Very low saturation voltage
Turn-On Voltage
* Excellent gain up to 20 Amps
Static Forward hFE 100 200 IC=-10mA, VCE=-1V
* Very low leakage C
Current Transfer Ratio 100 200 300 IC=-1A, VCE=-1V* B
75 140 IC=-5A, VCE=-1V* * Exceptional gain linearity down to 10mA E
35 IC=-20A, VCE=-1V* * Spice model available
E-Line
Transition Frequency fT 100 MHz IC=-100mA, VCE=-10V TO92 Compatible
f=50MHz
ABSOLUTE MAXIMUM RATINGS.
Output Capacitance Cobo 122 pF VCB=-10V, f=1MHz
PARAMETER SYMBOL VALUE UNIT
Switching Times ton 120 ns IC=-4A, IB1=-400mA
toff 130 ns IB2=400mA, VCC=-10V Collector-Base Voltage VCBO -50 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -20 A
THERMAL CHARACTERISTICS
Continuous Collector Current IC -4.5 A
PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* Ptotp 1.58 W
Thermal Resistance: Junction to Ambient Rth(j-amb) 150 °C/W Power Dissipation at Tamb=25°C Ptot 1.2 W
Junction to Case Rth(j-case) 50 °C/W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -50 -80 V IC=-100µA
Voltage
4.0
Max Power Dissipation - (Watts)

Collector-Emitter Breakdown V(BR)CER -50 -80 V IC=-1µA, RB ≤1KΩ

150 D.C.
Thermal Resistance (°C/W)

t1 D=t1/tP Voltag
3.0
Ca Collector-Emitter Breakdown V(BR)CEO -30 -45 V IC=-10mA*
se 100
te
tP
Voltage
m D=0.6
2.0 pe
ra
tu
Emitter-Base Breakdown V(BR)EBO -6 -8 V IE=-100µA
Amb re 50 Voltage
ient te
1.0 mpe D=0.2
ratu re D=0.1
Collector Cut-Off Current ICBO -50 nA VCB=-40V
D=0.05 -1 µA VCB=-40V, Tamb=100°C
Single Pulse
0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current ICER -50 nA VCB=-40V
T -Temperature (°C) Pulse Width (seconds) R ≤1KΩ -1 µA VCB=-40V, Tamb=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Derating curve Maximum transient thermal impedance
Collector-Emitter Saturation VCE(sat) -40 -60 mV IC=-0.5A, IB=-20mA*
Voltage -80 -100 mV IC=-1A, IB=-20mA*
-100 -160 mV IC=-2A, IB=-200mA*
-240 -320 mV IC=-5A, IB=-300mA*
Base-Emitter VBE(sat) -960 -1100 mV IC=-5A, IB=-300mA*
Saturation Voltage

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 ZTX949
TYPICAL CHARACTERISTICS

IC/IB=50 Tamb=25°C -55°C IC/IB=10

1.6 1.6 +25°C
IC/IB=10 +175°C
1.4 1.4
VCE(sat) - (Volts)

VCE(sat) - (Volts)
1.2 1.2
1.0 1.0
0.8 0.8
0.6 0.6
0.4 0.4
0.2 0.2

0 0
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC VCE(sat) v IC

+100°C -55°C
1.6 +25°C VCE=1V +25°C IC/IB=10
1.6 +100°C
-55°C 300 +175°C
1.4
hFE - Normalised Gain

1.4
hFE - Typical Gain

VBE(sat) - (Volts)

1.2 1.2
1.0 200 1.0
0.8 0.8
0.6 0.6
100
0.4 0.4
0.2 0.2
0
0.001 0.01 0.1 1 10 20 0
0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC VBE(sat) v IC

Single Pulse Test at Tamb=25°C

100
IC - Collector Current (Amps)

-55°C
+25°C VCE=1V
1.6 +100°C
+175°C
1.4
VBE - (Volts)

1.2 10

1.0
D.C.
0.8 1s
100ms
0.6 10ms
1 1.0ms
0.4 0.1ms

0.2

0
0.001 0.01 0.1 1 10 20 0.1
0.1 1 10 100
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)

VBE(on) v IC Safe Operating Area

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