YMP230N55
N-Channel Enhancement Mode Power MOSFET
General Description Product Summary
The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V
design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 mΩ
This device is suitable for use in PWM, load switching and max. 3 mΩ
general purpose applications. ID 230 A
Features
● VDS=55V；ID=230A@ VGS =10V； 100% UIS TESTED!
RDS(ON)< 3 mΩ @ VGS =10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard Switched and High Frequency Circuits TO-220-3L top view Schematic diagram
● Uninterruptible Power Supply
Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
YMP230N55 YMP230N55 TO-220-3L - - -
Table 1. Absolute Maximum Ratings (TA=25℃)
Parameter Symbol Value Unit
Drain-Source Voltage (VGS=0V） VDS 55 V
Gate-Source Voltage (VDS=0V) VGS ±25 V
Drain Current (DC) at Tc=25℃ ID (DC) 230 A
Drain Current (DC) at Tc=100℃ ID (DC) 170 A
(Note 1)
Drain Current-Continuous@ Current-Pulsed IDM (pluse) 900 A
Maximum Power Dissipation(Tc=25℃) PD 300 W
Derating factor 1.33 W/℃
(Note 2)
Single pulse avalanche energy EAS 2000 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
Notes [Link] Rating: Pulse width limited by maximum junction temperature
[Link] condition：Tj=25℃,VDD=28V,VG=10V,L= 1mH ,R g=25Ω;
1/6
Free Datasheet [Link]
YMP230N55
Table 2. Thermal Characteristic
Parameter Symbol Value Unit
Thermal Resistance，Junction-to-Case（Note2) ） RthJC 0.75 ℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 55 V
Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=-24V,VGS=0V 1 μA
Gate-Body Leakage Current IDSS VGS=±25V,VDS=0V ±100
10 μA
On Characteristics (Note 3)
Gate Threshold Voltage VGS(th) VDS=10V,ID=250μA 2 - 4 V
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=95A 2 3 mΩ
Dynamic Characteristics
Forward Transconductance gFS VDS=25V,ID=60A 106 S
Input Capacitance Clss 7360 PF
VDS=30V,VGS=0V,
Output Capacitance Coss 1680 PF
F=1.0MHz
Reverse Transfer Capacitance Crss 240 PF
Total Gate Charge Qg 160 nC
VDS=48V,ID=95A,
Gate-Source Charge Qgs 35 nC
VGS=10V
Gate-Drain Charge Qgd 42 nC
Switching times
Turn-on Delay Time td(on) 17 33 nS
Turn-on Rise Time tr VDD=30V,ID=1A,RL=30Ω 21 37 nS
Turn-Off Delay Time td(off) VGS=10V,RG= 3 Ω 72 148 nS
Turn-Off Fall Time tf R D =0.21 Ω 26 78 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode) ISD 95 A
(Note 3)
Forward on voltage VSD Tj=25℃,ISD=20A,VGS=0V 0.8 1.3 V
(Note 1)
Reverse Recovery Time trr 74 nS
Tj=25℃,IF=40A,di/dt=100A/μs
Reverse Recovery Charge Qrr 140 nC
Forward Turn-on Time ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes [Link] Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%, R G =25 Ω, Starting Tj=25℃
2/6
Free Datasheet [Link]
YMP230N55
Test circuit
1）EAS test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
3/6
Free Datasheet [Link]
YMP230N55
Typical Characteristics
Drain Current
Safe Operation Area 275
250
225
200
ID - Drain Current (A)
175
ID - Drain Current (A)
150
125
100
75
50
25
VDS - Drain-Source Voltage (V) Tj - Junction Temperature (°C)
Thermal Transient Impedance
Normalized Effective Transient
Square Wave Pulse Duration (sec)
4/6
Free Datasheet [Link]
YMP230N55
Typical Characteristics (Cont.)
Output Characteristics Drain-Source On Resistance
225
200 6
RDS(ON) - On Resistance (mΩ)
175
ID - Drain Current (A)
5
150
125 4
100 3
75
2
50
1
25
VDS - Drain-Source Voltage (V) ID - Drain Current (A)
Drain-Source On Resistance Gate Threshold Voltage
7
RDS(ON) - On - Resistance (MR)
Normalized Threshold Vlotage
VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)
5/6
Free Datasheet [Link]
YMP230N55
Typical Characteristics (Cont.)
Drain-Source On Resistance Source-Drain Diode Forward
200
Normalized On Resistance
IS - Source Current (A)
RON@T=25ºC:2.8mΩ
Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V)
Capacitance Gate Charge
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)
6/6
Free Datasheet [Link]
