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2SD1554 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

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Javier Mendoza Castro
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92 views3 pages

2SD1554 NPN Power Transistor Specs

This document provides product specifications for the SavantIC Semiconductor 2SD1554 silicon NPN power transistor. It is packaged in a TO-3P(H)IS package and is suitable for color TV horizontal output applications with features including a built-in damper diode, high voltage and speed capabilities, and low collector saturation voltage. Key specifications include an absolute maximum collector-emitter voltage of 600V, collector current of 3.5A, transition frequency of at least 3MHz, and collector-emitter saturation voltage below 8V when the collector current is 3A.

Uploaded by

Javier Mendoza Castro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

DESCRIPTION
[Link]
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage

APPLICATIONS
·For color TV horizontal output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 600 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 3.5 A

IB Base current 1 A

PC Collector power dissipation TC=25 40 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

CHARACTERISTICS
Tj=25 unless otherwise specified
[Link]
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage IE=0.2A , IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 5.0 8.0 V

VBEsat Base-emitter saturation voltage IC=3A ;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=500V; IE=0 10 µA

hFE DC current gain IC=0.5A ; VCE=5V 8

fT Transition frequency IC=0.1A ; VCE=10V 3 MHz

COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF

VF Diode forward voltage IF=3.5A 2.0 V

tf Fall time ICP=3A ;IB1(end)=0.8A 0.5 1.0 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1554

PACKAGE OUTLINE

[Link]

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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